UMS Launched New GaN HPA CHA8262-99F Covering 27.5-31.5GHz and Exhibiting at Psat an Excellent Pout of 41dBm
The CHA8262-99F is a new UMS GaN HPA covering 27.5-31.5GHz and exhibiting at Psat an excellent Pout of 41dBm and an excellent PAE of 25%. This HPA also features a high linear gain of 24dB and a low consumption of 20V@280mA. It benefits from a large operating range from -40℃ to 105℃.
The CHA8262-99F is mainly dedicated to satcom uplink and 5G applications.
This product is designed on a UMS proprietary 0.15µm GaN on Sic technology. The CHA82562-99F is proposed in die format.
Main features
Frequency range: 27.5-31.5GHz
Linear gain: 24dB
PAE: 25% @ Psat
Psat > 41dBm
Operating Temperature Range: -40 to 105℃
Low consumption: 20V@280mA
Input Return Loss: -10dB
Output Return Loss: -8dB
- 【Datasheet】CHA8262-99F 27.5 - 31.5 GHz 12W HPA GaN Monolithic Microwave IC bare die
- 【Datasheet】CHA8262-99F 27.5 - 31.5 GHz 12W HPA: GaN Monolithic Microwave IC bare die
- 【Datasheet】CHA8262-99F 27.5 - 31.5 GHz 12W HPA
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