Enhancement Power MOSFET Integrating Two P-channel Enhancement Mosfet Transistor
LowPowerSemi's LPM4953 integrates two P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch, and charging circuits. Standard Product LPM4953 is Pb-free and Halogen-free.
Features
Trench Technology
PMOS: VDS=-15V
RDS(ON) < 65mΩ, ID=3.6A @ VGS=-4.5V
RDS(ON) < 42mΩ, ID=5A @ VGS=-10V
Super high density cell design
Extremely Low Threshold Voltage
Small package SOP-8
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Order Information
Packaging Information
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