Littelfuse Expands Trench Series XPT™ Discrete IGBTs Help Reduce Gate Driver Requirements and Conduction Losses
Littelfuse recently launched an extended trench series XPT™ Discrete IGBTs-IXYK110N120A4, IXYX110N120A4 and IXYN110N120A4. Utilizing XPT™ thin-wafer technology and 4th generation (GenX4™) Trench IGBT process, this 1200V, 110A device helps to reduced gate driver requirements and conduction losses.It features reduced thermal resistance, low losses, high current densities and low gate charge. A positive voltage temperature coefficient enables designers to use multiple devices in parallel.
Benefits
▪ Ideal for high power density and high inrush currents, low loss applications
▪ Hard-switching capable
▪ Easy paralleling of devices
▪ Reduced gate driver requirements
▪ Ease of replacement and availability of isolation package
Features
▪ IC 110A, ICM 900A, Low VCE(sat)
▪ Square Reverse Bias Safe Operating Areas（RBSOA）at 960V
▪ Positive thermal coefficient
▪ Low gate charge QG
▪ Packages: TO-264, PLUS247 and SOT-227B (miniBLOC)
Markets/Applications
▪ Lamp Ballast
▪ 3-phase Welding Machines
▪ Inrush Current Protection Circuits
▪ Transformer-less Solar Power Inverter
▪ Load Switches
- 【Datasheet】IXYN110N120A4 1200V XPT™ IGBT GenX4™ Ultra Low-Vsat PT IGBT for up to 5kHz Switching
- 【Datasheet】IXYX110N120A4 1200V XPT™ IGBT GenX4™ Ultra Low-Vsat PT IGBT for up to 5kHz Switching
- 【Datasheet】IXYK110N120A4 1200V XPT™ IGBT GenX4™ Ultra Low-Vsat PT IGBT for up to 5kHz Switching
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