Alliance Memory Introduces Six New CMOS DDR4 SDRAMs that Combine Low 1.2V Power Consumption with Fast Clock Speeds of 1600MHz and Transfer Rates of 3200 MT/s
Alliance Memory announced that it has expanded its portfolio of CMOS DDR4 SDRAMs with six new 8Gb, 16Gb, and 32Gb devices in 78-ball FBGA and 96-ball FBGA packages. Providing the company’s customers with higher-density options for a wide range of applications, the AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN are built on a new process technology to deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost.
To increase battery life in portable electronics such as smartphones and tablets, the DDR4 SDRAMs released today feature a low operating voltage of +1.2V (±0.06V). The devices are designed, qualified, and recommended for use in 5G and IoT designs; computing applications; surveillance, gaming, and networking storage systems; smart meters; human-machine interfaces (HMI), digital signal controllers, and PNDs; and more. Built on an 8n-prefetch architecture, the devices offer fast clock speeds of 1600MHz and transfer rates of 3200 MT/s.
The AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN support sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh.
With minimal die shrinks, the DDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions — eliminating the need for costly redesigns and part requalification. Offered in the commercial (0℃ to +95℃) temperature range, the devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets.
Device Specification Table:
Samples and production quantities of the AS4C512M16D4B-62BCN, AS4C1G8D4B-62BCN, AS4C1G16D4A-62BCN, AS4C2G8D4A-62BCN, AS4C2G16D4-62BCN, and AS4C4G8D4-62BCN are available now, with lead times of four weeks.
- +1 Like
- Add to Favorites
Recommend
- Alliance Memory Expanded Lineup of High-Speed CMOS DDR4 SDRAMs AS4C1G8D4 and AS4C512M16D4 With 8Gb Devices
- Alliance Memory AS4C1G8D4 and AS4C512M16D4: the 8Gb High-Speed CMOS DDR4 SDRAMs with Low Power Consumption of +1.2V
- Alliance Memory Bolsters Product Lineup With 4Gb High-Speed CMOS DDR4 SDRAMs AS4C256M16D4 and AS4C512M8D4
- Alliance Memory Announces ISO 9001:2015 Recertification
- Alliance Memory AS4C256M16D4 and AS4C512M8D4 4Gb High-Speed CMOS DDR4 SDRAMs offer Low Power Consumption of +1.2V
- Alliance Memory Announced Dual-Die 8Gb DDR3L SDRAMs AS4C1G8D3LA and AS4C512M16D3LA in 78-Ball and 96-Ball FBGA Packages
- Alliance rounds out DDR4 SDRAM Lineup with six new 4Gb “A” die devices, which offer lower +1.2V operating voltages and higher speeds to 1600MHz in 96 and 78-Ball FBGA packages
- Alliance Memory Introduced High-Speed CMOS DDR SDRAMs With 256Mb, 512Mb, and 1Gb Densities in 60-Ball TFBGA and 66-Pin TSOP II Packages
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
