Alliance Memory Launches New LPSRAMs AS6CE1016A (1Mb) and AS6CE4016B (4Mb) With Embedded Error-Correction Code
KIRKLAND, Wash. — Jan. 25, 2023 — Alliance Memory announced that the company had expanded its portfolio of low-power asynchronous SRAM (LPSRAM) products with new 1Mb and 4Mb devices that feature embedded error-correction code (ECC). Compared to previous generation devices, the new AS6CE1016A (1Mb) and AS6CE4016B (4Mb) offer better failure in time (FIT) and mean time to failure (MTTF) characteristics with reduced soft error rates (SER) for more reliable operation in wide range of consumer, industrial, communications, and medical applications.
The new LPSRAMs’ ECC feature provides 1-bit error correction per byte, which makes them particularly suitable for low-power applications and battery backup nonvolatile memory applications. The data retention voltage for both devices is 1.5V with a typical data retention current of 1µA for the 1Mb AS6CE1016A and 2µA for the 4Mb AS6CE4016B. The devices operate from a single power supply of 2.7V to 3.6V, and all inputs and outputs are entirely TTL compatible.
With their enhanced performance, the new LPSRAMs are designed to meet the demands of a very wide range of applications, such as routers and switches in communications systems; programmable logic controllers in industrial automation systems; printers, gaming machines, musical instruments, and calculators; vending machines and ATMs; and elevator systems, control panels, and fire control systems.
Key device specifications and package options are shown in the table below.
Device Specification Table:
Samples and production quantities of the AS6CE1016A (1Mb) and AS6CE4016B (4Mb) are in stock and available now.
- AS6CE1016A-45ZIN 1M SRAM 44L TSOP II（400mil）可靠性测试报告（310-9N8-AI1）
- 【Datasheet】AS6CE1016A 64K X 16 BIT LOW POWER CMOS SRAM With Error-Correcting Code (ECC)
- 【Datasheet】AS6CE1016A 64K X 16 BIT LOW POWER CMOS SRAM With Error-Correcting Code (ECC)
- 【Datasheet】AS6CE4016B 256K X 16 BIT LOW POWER CMOS SRAM With Error-Correcting Code (ECC)
- AS6CE1016A-45ZIN 44L TSOPLL（400mil）材料声明
- AS6CE4016B-45BIN 48B BGA（6x8）材料声明
- AS6CE4016B-45ZIN 44L 400mil TSOPII材料声明
- AS6CE4016B-45ZIN 4M SRAM 44L TSOP II（400mil）可靠性测试报告（310-9N8-AE5）
- AS6CE4016B-45BIN 4M SRAM 48L BGA（6x8）可靠性测试报告（310-9N8-AE6）
- Alliance DRAM/SRAM/闪存&eMMC选型指南
- Alliance DRAM/SRAM/闪存&eMMC选型指南
- Alliance DRAM/SRAM/闪存&eMMC选型指南
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