AS6CE4016B 256K X 16 BIT LOW POWER CMOS SRAM With Error-Correcting Code (ECC)
■Fast access time: 45ns
■Low power consumption:
▲Operating current: 12mA (TYP .)
▲Standby current: 2.5μA (TYP. )
■Single 2.7V ~ 3.6V power supply
■ECC: 1-bit error correction per byte
■All inputs and outputs TTL compatible
■Fully static operation
■Tri-state output
■Data byte control:
▲LB# (DQ0 ~ DQ7)
▲UB# (DQ8 ~ DQ15)
■Data retention voltage: 1.5V ( MIN .)
■Package:
▲48-ball 6mm*8mm TFBGA
▲44-pin 400mil TSOP II
●GENERAL DESCRIPTION
■The AS6CE4016B is a 4,194,304-bit low power CMOS static random access memory organized as 262, 144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.
■The AS6CE4016B embeds error-correcting code(ECC) which can correct single-bit error per byte. It is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.
■The AS6CE4016B operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible
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AS6CE4016B 、 AS6CE4016B-45ZIN 、 AS6CE4016B-45BIN 、 AS6CE4016B-45BIN-XX 、 AS6CE4016B-45ZINXX |
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Datasheet |
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Please see the document for details |
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TSOP;TFBGA;FBGA |
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English Chinese Chinese and English Japanese |
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June. 2022 |
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Rev 1.0 |
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1.4 MB |
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