AS6CE1016A 64K X 16 BIT LOW POWER CMOS SRAM With Error-Correcting Code (ECC)
■Fast access time: 45ns
■Low power consumption: Operating
▲current: 12mA (TYP.)
▲Standby current: 1μA (TYP.)
■Single 2.7V ~ 3.6V power supply
■ECC: 1-bit error correction per byte
■All inputs and outputs TTL compatible
■Fully static operation
■Tri-state output
■Data byte control:
▲LB# (DQ0 ~ DQ7 )
▲UB# (DQ8 ~ DQ15)
■Data retention voltage: 1.5V (MIN.)
■Package: 44-pin 400mil TSOP II
●GENERAL DESCRIPTION
■The AS6CE1016A is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.
■The AS6CE1016A embeds error-correcting code(ECC) which can correct single-bit error per byte. It is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.
■The AS6CE1016A operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible.
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Datasheet |
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Please see the document for details |
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TSOP |
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English Chinese Chinese and English Japanese |
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June 2022 |
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Rev.1.0 |
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1.2 MB |
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