Alliance Memory 16Gb and 32Gb LPDDR4X SDRAMs Combine Low-Voltage Operation of 0.6V With Fast Clock Speeds of 2.133GHz and High Data Rates of 4.2Gbps
Alliance Memory today announced that it has expanded its offering of high-speed CMOS mobile low-power SDRAMs with new 16Gb and 32Gb LPDDR4X devices that combine low power ratings with increased clock speeds and data rates in the 200-ball FBGA package.
With low-voltage operation of 0.6V, the 16Gb AS4C512M32MD4V-046BIN and 32Gb AS4C1G32MD4V-046BIN deliver higher power efficiency for increased battery life in portable electronics for the consumer, commercial, and industrial markets, including smartphones, smart speakers, security surveillance systems, and other IoT devices utilizing AI and 5G technologies.
Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the LPDDR4X SDRAMs deliver high clock frequencies of 2.133GHz for extremely high data rates of 4.2Gbps. Offering a 32-bit bus width, the devices operate over an industrial temperature range of -40℃ to +95℃.
The AS4C512M32MD4V-046BIN and AS4C1G32MD4V-046BIN are organized as two channels per device, with individual channels consisting of eight banks of 16 bits. The components provide fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and configurable drive strength. An on-chip temperature sensor controls the self-refresh rate.
Alliance Memory’s LPDDR4X SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications, eliminating the need for costly redesigns and part requalification.
Device Specification Table:
Samples and production quantities of the new LPDDR4X SDRAMs are available now, with lead times of 12 weeks.
- +1 Like
- Add to Favorites
Recommend
- Alliance Memory Announces ISO 9001:2015 Recertification
- Alliance Memory Bolsters Product Lineup With 4Gb High-Speed CMOS DDR4 SDRAMs AS4C256M16D4 and AS4C512M8D4
- Alliance Memory Expanded Lineup of High-Speed CMOS DDR4 SDRAMs AS4C1G8D4 and AS4C512M16D4 With 8Gb Devices
- Alliance Memory AS4C256M16D4 and AS4C512M8D4 4Gb High-Speed CMOS DDR4 SDRAMs offer Low Power Consumption of +1.2V
- Alliance Memory AS4C1G8D4 and AS4C512M16D4: the 8Gb High-Speed CMOS DDR4 SDRAMs with Low Power Consumption of +1.2V
- Alliance Memory Announced Dual-Die 8Gb DDR3L SDRAMs AS4C1G8D3LA and AS4C512M16D3LA in 78-Ball and 96-Ball FBGA Packages
- Alliance rounds out DDR4 SDRAM Lineup with six new 4Gb “A” die devices, which offer lower +1.2V operating voltages and higher speeds to 1600MHz in 96 and 78-Ball FBGA packages
- Alliance Memory Introduced High-Speed CMOS DDR SDRAMs With 256Mb, 512Mb, and 1Gb Densities in 60-Ball TFBGA and 66-Pin TSOP II Packages
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
