SLKOR SL8N100F N-channel MOS Transistor with a Maximum Drain-source Voltage of 1000V, a Continuous Drain Current of 8A

2024-01-30 SLKOR News
N-channel MOS transistor,MOS transistor,SL8N100F,SLKOR

The rapid development of automotive intelligence and electrification has led to a continuous increase in global demand for semiconductors. Particularly, the popularity and penetration rate of new energy vehicles has further fueled the demand for components, presenting tremendous opportunities for the semiconductor industry. SLKOR (www.slkoric.com) has established research and development offices in Busan, South Korea, Beijing, China, and Suzhou, China. Through its global presence, SLKOR strives to promote technological innovation and product development.

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As an internationally oriented and globalized company, SLKOR has established close collaborations with employees and partner organizations worldwide. It has set up a laboratory for product performance and reliability testing at its headquarters in Shenzhen to ensure the quality and reliability of its products. SLKOR has achieved significant accomplishments in technological innovation, with over a hundred invention patents filed and a product portfolio of over 2000 models, covering a wide range of applications such as automotive electronics, industrial control, and communication equipment.

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By providing high-quality products and reliable services, SLKOR has served over ten thousand customers worldwide, with its products exported to countries and regions including Europe, America, Southeast Asia, and the Middle East.

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With the continuous development of electronic technology, semiconductor devices play a vital role in various fields. As a company dedicated to the research and production of semiconductor products, SLKOR has applied its high-voltage MOS transistor SL8N100F in numerous domains.

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The SL8N100F is an N-channel MOS transistor with excellent parameters and characteristics. It has a maximum drain-source voltage of 1000V, a continuous drain current of 8A, and a power dissipation capability of 31.7W. Additionally, its on-resistance is 1.8Ω at 10V and 4A, and the threshold voltage is 5V under a condition of 250μA. These specifications enable the SL8N100F to operate reliably in high-voltage, high-current, and high-power environments.

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The SL8N100F has many outstanding features. Firstly, it has a low gate charge and fast switching characteristics, providing fast and reliable switching action. Secondly, the SL8N100F is a RoHS-compliant product, meeting environmental standards and helping to protect the environment. Additionally, due to its design for low-current applications, this MOS transistor performs well under low-current conditions.


The high-voltage MOS transistor SL8N100F from SLKOR has been widely used in various fields such as high-frequency switch mode power supplies, electronic ballasts, and UPS systems. In high-frequency switch mode power supplies, it can effectively control the current and has fast switching characteristics to meet the demand for efficient power conversion. In electronic ballasts and UPS systems, the SL8N100F provides stable power dissipation capability, ensuring the normal operation of the equipment.


In summary, the SL8N100F is a high-performance and highly reliable semiconductor product suitable for various fields such as high-frequency switch mode power supplies, electronic ballasts, and UPS systems. SLKOR continuously promotes industry development with its advanced technology and high-quality products, providing strong support for applications in various fields. With the advancement of technology, the SL8N100F will continue to play an important role in driving innovation and development in the electronics field.

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