60V 10mohm Dual N channel SGT MOSFET AKG6A100GL for High-efficiency Power Management Applications
This ALKAISEMI Dual N Channel SGT MOSFET has been designed for low on-state resistance(RDSON), and suggested use for battery protection, special for high-efficiency power management applications.
Features:
Low RDS(ON)
•100% UIS Tested
•RoHS compliant
•Halogen-free
Applications:
• Battery Management System
• Motor Drivers
• DC-DC Converter
Key Performance Parameters:
Ordering Information:
Maximum Ratings (TA = 25℃ unless otherwise noted)
Thermal Characteristics
Notes:
1. The max drain current rating is silicon-limited
2. The max drain current rating is package limited
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 0.5mH, VDD=30V, IAS = 18.5A, RG = 25Ω, Starting TJ=25℃
5. Mount on minimum PCB layout
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