100V/185A N-channel SGT MOSFET AKG10N038DM especially for High Efficiency Power Management Applications
This N-channel SGT MOSFET AKG10N038DM has been designed for low on-state resistance and maintains superior switching performance, especially for high efficiency power management applications.
Features:
Low RDS(ON)
RoHS compliant
Halogen-free
100% UIS tested
Applications
Power Management Switches
DC-DC Converter
Battery Management System
Maximum Ratings (TA=25℃ unless otherwise noted)
Thermal Characteristics
Notes:
1. The max drain current rating is silicon limited
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=0.5mH, VDD=50V, IAS=42A, Rg=50Ω, Starting TJ=25℃
4. Mount on minimum PCB layout
Ordering Information
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