Breakthrough Technology Silicon Carbide Combines High Performance with Low Losses
Breakthrough Technology Combines High Performance with Low Losses
Silicon carbide (SiC) devices belong to the so-called wide bandgap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). In particular, the much higher breakdown field strength and thermal conductivity of silicon carbide allow eveloping devices which by far outperform the corresponding silicon-based ones and enable efficiency levels unattainable otherwise. FMS’s portfolio of SiC devices covers 650V and 1200V Schottky diodes.
Advantages of Silicon Carbide Over Silicon Devices
The differences in material properties between silicon carbide and silicon limit the fabrication of practical silicon unipolar diodes (Schottky diodes) to a range of up to 100-150V, with a relatively high on-state resistance and leakage current. In SiC, Schottky diodes can reach a much higher breakdown voltage. Silicon Carbide (SiC) is the ideal technology for higher switching frequency, higher efficiency, and higher power (>650V) applications. AS offers products up to 1200V in discrete packages.
Features
No reverse recovery charge
Purely capacitive switching
High operating temperature (Tj, max =175℃)
Advantages
Low turn-off losses
Reduction of Mosfet or IGBT turn-on loss
Switching losses independent from load current, switching speed, and temperature
Benefits
System efficiency improvement compared to Si diodes
Reduced cooling requirements
Enabling higher frequency/increased power density
Higher system reliability due to lower operating temperature
Reduced EMI
Applications
PC/Server/Telecom power
EV/HEV charging stations
OBC
Solar converters
UPS
Lighting
Motor drives
Energy storage
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