CHS8618-99F GaN reflective SPDT Switch with a Low Insertion Loss of 1.3dB and Switching Speed of 30ns
The CHS8618-99F is a GaN reflective SPDT switch.
It exhibits:
High input P-1dB: >42dBm
Low insertion loss: 1.3dB
Switching speed: 30ns (tested up to Pin 40dBm)
The CHS8618-99F is designed for a wide range of applications from Defense to radar and commercial communication systems.
It is designed on a UMS internal GaN 0.25µm pHEMT process.
Summary:
Frequency range: 6-18GHz
IP1dB: >42dBm
On station insertion losses: 1.3dB
Pin Max: 42.7dBm
Switching speed: 30ns
Control voltage: -25V/0V
Chip size: 1.65×2.18×0.1mm
- +1 Like
- Add to Favorites
Recommend
- UMS Enlarges its Telecom Power Amplifier Offer, Boosting your radio with UMS Power Amplifiers
- UMS Proposes New Version of the ADS PPH15X Design Kit
- UMS and Fraunhofer IIS Partner to Offer GaN and GaAs Technologies to EUROPRACTICE Customers
- UMS Announced A New Version of GH15 Gan Technology with Bcb Mechanical Protection and A High-density Mim Capacitor
- UMS Bare Die GaN Power Bars are Available in Hermetic, Plastic, or Flange Packages
- DGA Entrusted UMS to Develop A European GaN-on-SiC Technology with The Realisation of The Art Ku
- UMS Has Designed a 6-42GHz 1W, 2W, 4W Power Amplifiers to Cover the Point To Point Telecom Market
- UMS Has Introduced 2 GaN Power Bars CHK9013-99F and CHK9014-99F Featuring Wide Band Capability up to 13GHz max
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.