UMS Launches a New 17.3-21.5GHz 4W GaN Power Amplifier CHA6262-99F for Space Applications
The CHA6262-99F is a three-stage GaN high power amplifier operating in the frequency band 17.3-21.5GHz. This HPA typically provides 4W output power associated with 36% of Power Added Efficiency.
The circuit exhibits a typical small signal gain of 30dB. The overall power supply is 18V/182mA.
This HPA is dedicated to Space applications and well suited for a wide range of microwave applications and systems.
The GaN Power Amplifier product is developed on a robust 0.15µm gate length GaN on the SiC HEMT process and is available as a bare die.
Main Features:
17.3-21.5GHz frequency range
Linear gain is 30dB
Pout=36dBm for Pin=14dBm
NPR > 17dB for Pout = 2Watts
PAE=36% at Psat
DC bias: Vd=18Volts @ Idq=182mA
Chip size: 3.55mmx2.24mm
- 【Datasheet】CHA6262-99F 17.3-21.5GHz 4W GaN Power Amplifier: GaN Monolithic Microwave IC
- 【Datasheet】CHA6262-99F 17.3-21.5GHz 4W GaN Power Amplifier GaN Monolithic Microwave IC
- 【Datasheet】CHA6262-99F 17.3-21.5GHz 4W GaN Power Amplifier
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