CHK8013-99F,a GaN Wideband Capability Transistor Covering DC to 10GHz from UMS

2023-11-01 UMS News
GaN wideband capability transistor,transistor,CHK8013-99F,UMS

The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz.


It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes. 

This product requires an external matching circuitry.

This circuit is designed on an in-house GaN 0.25µm Hemt process.

This general purpose transistor is suitable for a wide range of RF power applications such as Radar and Telecommunication.


Main Features:

  • RF Bandwidth: Up to 10GHz

  • Psat: 14W

  • PAE: 70% @Psat

  • DC bias: Vd up to 30V

  • Pulsed and Operating Modes


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