A New 25-45GHz Wideband Driver CHA3409-98F: Excellent PAE of 19% and High Linear Gain of 23dB
UMS new CHA3409-98F is a 25-45GHz wideband driver including self-biasing to reduce temperature impact. The CHA3409-98F exhibits an excellent PAE of 19% @ 1dBcomp with 19dBm Pout, a high linear gain of 23dB. This driver, proposed in bare die, is designed for Communication, Instrumentation and Electronic Warfare applications. This circuit is manufactured on a 0.15µm GaAs proprietary process.
Main features:
Wideband Driver: 25-45GHz
P-1dB: 19dBm
Linear gain: 23dB
PAE: 19% @ 1dB comp
Low consumption: 100mA@4V
Psat: 20dBm
Chip size: 2×1.3×0.1mm
Output power & PAE vs frequency
Small Signal Gain (dB) and Input and Output Return Losses (dB) @25℃
- 【Datasheet】CHA3409-98F 25-45GHz Driver
- 【Datasheet】CHA3409-98F 25-45GHz Driver GaAs Monolithic Microwave IC in bare die
- +1 Like
- Add to Favorites
Recommend
- UMS Enlarges its Telecom Power Amplifier Offer, Boosting your radio with UMS Power Amplifiers
- UMS Proposes New Version of the ADS PPH15X Design Kit
- UMS and Fraunhofer IIS Partner to Offer GaN and GaAs Technologies to EUROPRACTICE Customers
- UMS Announced A New Version of GH15 Gan Technology with Bcb Mechanical Protection and A High-density Mim Capacitor
- UMS Bare Die GaN Power Bars are Available in Hermetic, Plastic, or Flange Packages
- DGA Entrusted UMS to Develop A European GaN-on-SiC Technology with The Realisation of The Art Ku
- UMS Has Designed a 6-42GHz 1W, 2W, 4W Power Amplifiers to Cover the Point To Point Telecom Market
- UMS Has Introduced 2 GaN Power Bars CHK9013-99F and CHK9014-99F Featuring Wide Band Capability up to 13GHz max
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.