Alliance Memory Introduced High-Speed DDR2 DRAMs With 512Mb and 1Gb Densities in 60-Ball (x8) and 84-Ball (x16) FBGA Packages
SAN CARLOS, Calif. — Mar. 10, 2014 — Alliance Memory today introduced a line of High-Speed CMOS Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAM) with densities of 512Mb (AS4C32M16D2) and 1Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages.
The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in automotive, industrial, consumer, and networking products requiring high memory bandwidth. The AS4C32M16D2 is internally configured as four banks of 8M words x 16 bits. The AS4C64M16D2 and AS4C128M8D2 are internally configured as eight banks of 8M x 16 bits and 16M x 8 bits, respectively. The DDR2 SDRAMs offer a synchronous interface, operate from a single + 1.8-V (± 0.1V) power supply, and are lead (Pb)- and halogen-free.
The AS4C32M16D2, AS4C64M16D2, and AS4C128M8D2 feature a fast clock rate of 400 MHz and a data rate of 800 Mbps/pin, and they are offered in commercial (0℃ to +85℃), industrial (-40℃ to + 95℃), and automotive (-40℃ to +105℃) temperature ranges. The DDR2 SDRAMs provide programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
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