Alliance Memory Introduced High-Speed DDR2 DRAMs With 512Mb and 1Gb Densities in 60-Ball (x8) and 84-Ball (x16) FBGA Packages
SAN CARLOS, Calif. — Mar. 10, 2014 — Alliance Memory today introduced a line of High-Speed CMOS Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAM) with densities of 512Mb (AS4C32M16D2) and 1Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages.
The devices released today provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in automotive, industrial, consumer, and networking products requiring high memory bandwidth. The AS4C32M16D2 is internally configured as four banks of 8M words x 16 bits. The AS4C64M16D2 and AS4C128M8D2 are internally configured as eight banks of 8M x 16 bits and 16M x 8 bits, respectively. The DDR2 SDRAMs offer a synchronous interface, operate from a single + 1.8-V (± 0.1V) power supply, and are lead (Pb)- and halogen-free.
The AS4C32M16D2, AS4C64M16D2, and AS4C128M8D2 feature a fast clock rate of 400 MHz and a data rate of 800 Mbps/pin, and they are offered in commercial (0℃ to +85℃), industrial (-40℃ to + 95℃), and automotive (-40℃ to +105℃) temperature ranges. The DDR2 SDRAMs provide programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
- +1 Like
- Add to Favorites
Recommend
- Alliance Memory Announces ISO 9001:2015 Recertification
- Alliance Memory Expanded Lineup of High-Speed CMOS DDR4 SDRAMs AS4C1G8D4 and AS4C512M16D4 With 8Gb Devices
- Alliance Memory Bolsters Product Lineup With 4Gb High-Speed CMOS DDR4 SDRAMs AS4C256M16D4 and AS4C512M8D4
- Alliance Memory Introduced AEC-Q100-Compliant 2Gb DDR3L SDRAMs AS4C128M16D3LC-12BAN and AS4C128M16D3LC-12BANTR
- Alliance Memory AS4C256M16D4 and AS4C512M8D4 4Gb High-Speed CMOS DDR4 SDRAMs offer Low Power Consumption of +1.2V
- Alliance Memory AS4C1G8D4 and AS4C512M16D4: the 8Gb High-Speed CMOS DDR4 SDRAMs with Low Power Consumption of +1.2V
- Alliance Memory Announced Dual-Die 8Gb DDR3L SDRAMs AS4C1G8D3LA and AS4C512M16D3LA in 78-Ball and 96-Ball FBGA Packages
- Alliance rounds out DDR4 SDRAM Lineup with six new 4Gb “A” die devices, which offer lower +1.2V operating voltages and higher speeds to 1600MHz in 96 and 78-Ball FBGA packages
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
