UMS Has Launched the Fully Matched GaN S-Band Chipset: a 60W HPA (the CHZ9012-QFA ) and a 12W driver (the CHZ8012-QJA)
UMS has launched a state of the art fully matched S-band chipset composed of 2 products, a 60W HPA (the CHZ9012-QFA ) and a 12W driver (the CHZ8012-QJA).
CHZ8012-QJA
The CHZ8012-QJA is an S-Band Quasi-MMIC High Power Amplifier based on an internally produced GaN power bar and GaAs input and output matching circuits. It can be also used as a driver for the CHZ9012-QFA.
This product is fully matched to 50Ω and produces 12W output power with a PAE >52%.
It can be used in a wide range of applications, from military to commercial radar systems.
The circuit is supplied in a low cost DFN plastic package which provides low parasitics and low thermal resistance:
Rth=4.2℃/W
Tj=135℃ (peak junction temperature).
Conditions: Tcase = 95℃; Pin=29dBm; Pulsed mode (400µs/15%)
Performance summary:
Frequency range: 2.6-3.4GHz
Rth: 4.2℃/W
Output power: 12W
PAE: >52%
DC bias: Vd up to 30V
DFN package; 28 leads 7x7mmS
Pulsed operating mode
CHZ9012-QFA
The CHZ9012-QFA is an S-Band Quasi-MMIC High Power Amplifier based on an internally produced GaN power bar and GaAs input and output matching circuits. It can also be used together with the CHZ8012-QJA as a driver.
This product is fully matched to 50Ω and exhibits 60W output power with more than 50% PAE.
This product is suitable for a wide range of applications, from military to commercial radar systems.
This circuit is supplied in a low cost DFN plastic package which provides low parasitics and low thermal resistance:
Rth=0.86℃/W
Tj=138℃ (peak junction temperature).
Conditions: Tcase = 95℃; Pin=39dBm; Pulsed mode (400µs/15%)
Performance summary:
Frequency range: 2.7-3.4GHz
Rth: 0.86℃/W
Output power: 60W
PAE: >50%
DC bias: Vd up to 30V
DFN package; 30 leads 8x8mmS
Pulsed operating mode
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