ROHM‘s 4th Generation SiC MOSFETs to be Used in Hitachi Astemo‘s Inverters for Electric Vehicles, Contributing to Longer Cruising Range and Smaller Systems in Electric Vehicles
ROHM has recently announced the adoption of its new 4th Generation SiC MOSFETs and gate driver ICs in electric vehicle inverters from Hitachi Astemo, Ltd. a leading Japanese automotive parts manufacturer.
As the electrification of cars rapidly advances towards achieving a decarbonized society, the development of electric powertrain systems that are more efficient, compact, and lightweight is currently underway.
Especially for EVs, the inverter, which plays a central role in the drive system, needs to be made more efficient to extend the cruising range and reduce the size of the onboard battery, increasing the expectations for SiC power devices.
As the first supplier in the world to begin mass production of SiC MOSFETs in 2010, ROHM continues to develop market-leading SiC power device technologies. Among these are ROHM’s latest 4th Generation SiC MOSFETs that deliver improved short-circuit withstand time along with the industry’s lowest ON-resistance, making it possible to extend the cruising range of electric vehicles by reducing power consumption by 6% vs IGBTs (as calculated by the international standard WLTC fuel efficiency test) when installed in the main inverter.
At the same time, Hitachi Astemo, which has been developing advanced technologies for vehicle motors and inverters for a number of years, already enjoys a considerable track record in the increasingly popular EV market. However, this marks the first time SiC devices will be adopted for the main inverter circuit to further improve performance. The inverters are slated to be supplied to automakers from 2025, starting in Japan and then expanding overseas.
Going forward, as a leading supplier of SiC power devices, ROHM will continue to strengthen its lineup and provide power solutions that contribute to technical innovation in vehicles by combining peripheral device technologies such as control ICs designed to maximize performance.
- +1 Like
- Add to Favorites
Recommend
- SiC MOSFETs and SiC Schottky Diodes in TO-247-3L＆4L for Sustainable Public Transportation
- Littelfuse Unveils IX4352NE Low-side Gate Driver for SiC MOSFETs and High-power IGBTs
- Vincotech’s 70A flowPACK 1 SiC Modules Featuring Ultra-fast 900V SiC MOSFET for up to 400kHz switching frequency
- Renesas Introduces New Gate Driver IC RAJ2930004AGM for IGBTs and SiC MOSFETs Driving EV Inverters
- SiC MOSFETs from ROHM Chosen by Lucid for Efficient On-board Charging of Groundbreaking Luxury Electric Vehicle
- ROHM SiC MOSFETs Solve Design Challenges for Leading Solar Energy Company Midnite Solar
- Bare Die SiC from ROHM Chosen by Apex Microtechnology for Newest Line of Power Modules, Saving Space and Increasing Performance
- SMC Releases S2M0025120K 1200V SiC MOSFET Optimized for Power Fast Switching Applications
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
