SiC MOSFET
●SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss, and increased stabilization. Lower ON resistance and a compact chip size result in reduced capacitance and gate charge. In addition, SiC exhibits superior material properties, such as minimal ON-resistance increases, and enables greater package miniaturization and energy savings than silicon (Si) devices, in which the ON resistance can more than double with increased temperature.
●ROHM's 4th Generation SiC MOSFET:
■The latest 4th gen SiC MOSFETs provide industry-leading low ON resistance without sacrificing short-circuit withstand time. Additional features include low switching loss and support for 15V gate-source voltage that contributes to further device power savings.
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