SiC MOSFET

2023-05-24

●SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss, and increased stabilization. Lower ON resistance and a compact chip size result in reduced capacitance and gate charge. In addition, SiC exhibits superior material properties, such as minimal ON-resistance increases, and enables greater package miniaturization and energy savings than silicon (Si) devices, in which the ON resistance can more than double with increased temperature.

●ROHM's 4th Generation SiC MOSFET:

■The latest 4th gen SiC MOSFETs provide industry-leading low ON resistance without sacrificing short-circuit withstand time. Additional features include low switching loss and support for 15V gate-source voltage that contributes to further device power savings.

Selection catalogue

ROHM

SCT3017ALSCT3017ALHRSCT3022ALSCT3022ALHRSCT3030ALSCT3030ALHRSCT3060ALSCT3060ALHRSCT3080ALSCT3080ALHRSCT3120ALSCT4013DESCT4026DESCT4026DEHRSCT4045DESCT4045DEHRSCT4018KESCT3022KLSCT3022KLHRSCT3030KLSCT3030KLHRSCT4036KESCT4036KEHRSCT3040KLSCT3040KLHRSCT4062KESCT4062KEHRSCT2080KESCT2080KEHRSCT3080KLSCT3080KLHRSCT3105KLSCT3105KLHRSCT2160KESCT2160KEHRSCT3160KLSCT2280KESCT2280KEHRSCT2450KESCT2450KEHRSCT3030ARSCT3060ARSCT3080ARSCT3040KRSCT3080KRSCT3105KRSCT4013DRSCT4026DRSCT4026DRHRSCT4045DRSCT4045DRHRSCT4018KRSCT4036KRSCT4036KRHRSCT4062KRSCT4062KRHRSCT3030AW7SCT3060AW7SCT3080AW7SCT3120AW7SCT4013DW7SCT4026DW7SCT4026DW7HRSCT4045DW7SCT4045DW7HRSCT4018KW7SCT4036KW7SCT4036KW7HRSCT3040KW7SCT4062KW7SCT4062KW7HRSCT3080KW7SCT3105KW7SCT3160KW7SCT2H12NZ

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Part#

SiC MOSFET

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Selection guide

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TO-247;TO-247N;TO-247-4L;TO-3PFM;TO-263-7L;TO-268-2L

English Chinese Chinese and English Japanese

2022/8/3

Edition 2022

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