NCP51705 SiC MOSFETs: Gate Drive Optimization
■Silicon carbide (SiC) is part of the wide bandgap (WBG) family of semiconductor materials used to fabricate discrete power semiconductors. As shown in Table 1, conventional silicon (Si) MOSFETs have a bandgap energy of 1.12 eV compared to SiC MOSFETs possessing 3.26 eV.
■The wider bandgap energy associated with SiC and (GaN) Gallium Nitride means that it takes approximately 3 times the energy to move electrons from their valence band to the conduction band, resulting in a material that behaves more like an insulator and less like a conductor. This allows WBG semiconductors to withstand much higher breakdown voltages, highlighted by their breakdown field robustness being 10 times that of silicon. A higher breakdown field enables a reduction in device thickness for a given voltage rating which translates to lower on−resistance and higher current capability. SiC and GaN each have mobility parameters on the same order of magnitude as silicon, making both materials well suited for high−frequency switching applications. However, the parameter most differentiating SiC is its thermal conductivity being more than 3 times greater compared to silicon and GaN. Higher thermal conductivity translates to lower temperature rise for a given power dissipation. The guaranteed maximum operating temperature for commercially available SiC MOSFETs is 150°C < T-J < 200°C. Comparatively, SiC junction temperatures as high as 600°C are attainable but mostly limited by bonding and packaging techniques. This makes SiC the superior WBG semiconductor material for high−voltage, high−speed, high−current, high−temperature, switching power applications.
■SiC MOSFETs are commonly available in the range of 650 V < BVDSS <1.7 kV, with the majority focus being 1.2 kV and above. At the lower range of 650 V, traditional silicon MOSFETs and GaN outperform SiC. However, one reason to consider lower voltage SiC MOSFETs might be to take advantage of their superior thermal characteristics. Although the dynamic switching behavior of SiC MOSFETs is quite similar to standard silicon MOSFETs, there are unique gate drive requirements dictated by their device characteristics that must be taken into consideration.
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Datasheet |
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Please see the document for details |
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TO−220;TO−247 |
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English Chinese Chinese and English Japanese |
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2022/5/4 |
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Rev. 2 |
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TND6237/D |
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2.3 MB |
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