Alliance Memory Released 2M x 32 and 4M x 32 High-Speed CMOS Synchronous SDRAMs in 90-Ball TFBGA and 86-Pin TSOP II Packages
SAN CARLOS, Calif. — Nov. 5, 2013 — Alliance Memory extended its 64M and 128M lines of high-speed CMOS synchronous DRAMs (SDRAM) with a 2M x 32 device in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA package and a 4M x 32 device in the 86-pin 400-mil plastic TSOP II package.
The devices released provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom, and consumer products requiring high memory bandwidth. For these applications, the AS4C2M32S-7TCN and AS4C4M32S-7TCN feature fast access time from clock down to 5.4ns and fast clock rates to 166MHz.
Offering a commercial temperature range of 0℃ to 70℃, the SDRAMs operate from a single +3.3-V (±0.3V) power supply and are lead (Pb)- and halogen-free. The devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full pages, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
The AS4C2M32S-7TCN and AS4C4M32S-7TCN are the latest in Alliance Memory’s full line of high-speed SDRAMs, which includes devices with densities of 16Mb, 64Mb, 128Mb, 256Mb, and 512Mb in the 50-pin TSOP II, 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball TFBGA packages.
Samples and production quantities of the SDRAMs are available now, with lead times of eight weeks for large orders.
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