Alliance Memory Launched x32 High-Speed CMOS SDRAMs in 90-Ball TFBGA and 86-Pin TSOP II Packages
SAN CARLOS, Calif. — Mar. 24, 2014 — Alliance Memory extended its offering of 64M, 128M, and 256M high-speed CMOS synchronous DRAMs (high-speed CMOS SDRAM) with x32 devices in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA and 86-pin 400-mil plastic TSOP II packages.
The 2M x 32 AS4C2M32S-6TIN and AS4C2M32S-6BIN; 4M x 32 AS4C4M32S-6TIN and AS4C4M32S-6BIN; and 8M x 32 AS4C8M32S-7BCN provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, commercial, medical, telecom, and networking products requiring high memory bandwidth. For these applications, the devices feature fast access time from clock down to 5.4 ns.
The devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full pages, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
The AS4C2M32S-6TIN, AS4C2M32S-6BIN, AS4C4M32S-6TIN, AS4C4M32S-6BIN, and AS4C8M32S-7BCN are the latest in Alliance Memory’s full line of high-speed SDRAMs, which includes devices with densities of 16Mb, 64Mb, 128Mb, 256Mb, and 512Mb in the 50-pin TSOP II, 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II, and 90-ball TFBGA packages. The AS4C2M32S-6BIN and AS4C4M32S-6BIN are also available in commercial temperature versions, the AS4C2M32S-7BCN and AS4C4M32S-7BCN.
Device Specification Table (products highlighted in orange):
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