Southeast University and Julin Technology Jointly Published GaN SPICE Modeling Paper on IEEE TPEL
Recently, the ASIC Center of Southeast University and Julin Technology jointly published a paper by the name of Physics-Based SPICE Modeling of Dynamic On-state Resistance of p-GaN HEMTs on IEEE Trans. on Power Electronics Letters (IEEE TPEL).
This letter introduces a new physics-based SPICE modeling method for the dynamic on-state resistance (Ron,dy) of gallium nitride-based p-type gate power high electron mobility transistors (p-GaN HEMTs). To describe the continuous variations of Ron,dy, a time-resolved electron mobility variation (Δμeff) model is proposed. Physical parameters including activation energy and voltage acceleration factor of traps in p-GaN HEMTs are extracted as the model parameters. Then, to achieve the goal of simulating Ron,dy, the proposed Δμeff model is incorporated into the surface potential-based advanced SPICE model for GaN HEMT (ASM-HEMT). Simulative results prove the proposed models can predict the Ron, dy-induced power loss.
Physics_Based_SPICE_Modeling_of_Dynamic_On-state_Resistance_of_p-GaN_HEMTs：
https://mp.weixin.qq.com/s?__biz=Mzg5MjY2NzgzOA==&mid=2247488282&idx=1&sn=2742d27717bc813383711f98511f3ef8&chksm=c03bc1cbf74c48ddc15b4cf7a96e2b1fca841a7b00cfc8cccd8e05d8310cc163845df85bd5bb&token=500065208&lang=zh_CN
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