MMBD352WT1G,NSVMMBD352WT1G Dual Schottky Barrier Diode
●These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
●Features
■Very Low Capacitance − Less Than 1.0 pF @ 0 V
■Low Forward Voltage − 0.5 V (Typ) @ I-F = 10 mA
■ AEC Qualified and PPAP Capable
■ NSV Prefix for Automotive and Other Applications Requiring
■nique Site and Control Change Requirements
■ These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Datasheet |
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Please see the document for details |
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SOT−323 |
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English Chinese Chinese and English Japanese |
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November, 2011 |
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Rev. 5 |
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MMBD352WT1/D |
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177 KB |
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