MMBD352WT1G,NSVMMBD352WT1G Dual Schottky Barrier Diode

PublishTime：2022-01-29

●These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
●Features:
■Very Low Capacitance − Less Than 1.0 pF @ 0 V
■Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
■AEC Qualified and PPAP Capable
■NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
■These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*

Brand of Product：	ON Semiconductor
Part#：	MMBD352WT1G 、 NSVMMBD352WT1G More Part#
Product Category：	Dual Schottky Barrier Diode More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOT−323;SC−70
Language：	English Chinese Chinese and English Japanese
Date of Creation：	November, 2011
Version Number：	Rev. 5
Data Encoding：	MMBD352WT1/D
Data Size：	206 KB

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