MMBD352WT1G,NSVMMBD352WT1G Dual Schottky Barrier Diode
●Features:
■Very Low Capacitance − Less Than 1.0 pF @ 0 V
■Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
■AEC Qualified and PPAP Capable
■NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
■These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
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Datasheet |
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Please see the document for details |
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SOT−323;SC−70 |
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English Chinese Chinese and English Japanese |
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November, 2011 |
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Rev. 5 |
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MMBD352WT1/D |
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206 KB |
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