Si823x Data Sheet
2019-08-15
The Si823x isolated driver family combines two independent, isolated drivers into a
single package. The Si8230/1/3/4 are high-side/low-side drivers, and the
Si8232/5/6/7/8 are dual drivers. Versions with peak output currents of 0.5 A
(Si8230/1/2/7) and 4.0 A (Si8233/4/5/6/8) are available. All drivers operate with a maximum supply voltage of 24 V.
The Si823x drivers utilize Silicon Labs' proprietary silicon isolation technology, which
provides up to 5 kVRMS withstand voltage per UL1577 and fast 60 ns propagation
times. Driver outputs can be grounded to the same or separate grounds or connected
to a positive or negative voltage. The TTL level compatible inputs with >400 mV hysteresis are available in individual control input (Si8230/2/3/5/6/7/8) or PWM input
(Si8231/4) configurations. High integration, low propagation delay, small installed size,
flexibility, and cost-effectiveness make the Si823x family ideal for a wide range of isolated MOSFET/IGBT gate drive applications.
single package. The Si8230/1/3/4 are high-side/low-side drivers, and the
Si8232/5/6/7/8 are dual drivers. Versions with peak output currents of 0.5 A
(Si8230/1/2/7) and 4.0 A (Si8233/4/5/6/8) are available. All drivers operate with a maximum supply voltage of 24 V.
The Si823x drivers utilize Silicon Labs' proprietary silicon isolation technology, which
provides up to 5 kVRMS withstand voltage per UL1577 and fast 60 ns propagation
times. Driver outputs can be grounded to the same or separate grounds or connected
to a positive or negative voltage. The TTL level compatible inputs with >400 mV hysteresis are available in individual control input (Si8230/2/3/5/6/7/8) or PWM input
(Si8231/4) configurations. High integration, low propagation delay, small installed size,
flexibility, and cost-effectiveness make the Si823x family ideal for a wide range of isolated MOSFET/IGBT gate drive applications.
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