SEMICONDUCTOR SILICON EPITAXIAL TYPE DIODE KDS120E TECHNICAL DATA
●FEATURES：
■Small Package : USM.
■Low Forward Voltage : V-F=0.92V (Typ.).
■Fast Reverse Recovery Time : t-rr=1.6ns(Typ.).
■Small Total Capacitance: C-T=2.2pF (Typ.).
■Suffix U: Qualified to AEC-Q101. ex) KDS120E-RTK/HU
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2018. 04. 10 |
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Revision No : 4 |
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74 KB |
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