KDS120 SILICON EPITAXIAL TYPE DIODE TECHNICAL DATA
●FEATURES
■Small Package: USM.
■Low Forward Voltage: V-F=0.92V (Typ.).
■Fast Reverse Recovery Time: t-rr=1.6ns(Typ.).
■Small Total Capacitance: C-T=2.2pF (Typ.).
■Suffix U: Qualfied to AEC-Q101 ex) KDS120-RTK/HU
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Datasheet |
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Please see the document for details |
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USM |
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English Chinese Chinese and English Japanese |
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2018. 04. 10 |
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Revision No : 5 |
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83 KB |
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