SX50P10D -100V P-Channel Enhancement Mode MOSFET

2025-03-21
SX50P10D是一款采用先进沟槽技术的MOSFET,提供优异的RDS(ON)、低栅极电荷,并可在低至4.5V的栅极电压下运行。该器件适用于作为电池保护应用或用于其他开关应用。其主要特性包括-100V的漏源电压、-50A的连续漏极电流、小于52mΩ的RDS(ON)在10V栅极电压下,以及TO-252-3L封装。适用于无刷电机、负载开关和不间断电源等应用。

SXSEMI

SX50P10D

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Part#

MOSFET

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电池保护 ]无刷电机 ]负载开关 ]不间断电源 ]

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Datasheet

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Please see the document for details

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TO-252-3L

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