SX50N25T 250V N-Channel Enhancement Mode MOSFET

2025-03-21
SX50N25T是一款采用自对准平面技术的硅N沟道增强型VDMOSFET,通过降低导通损耗、提高开关性能和增强雪崩能量,适用于各种功率开关电路,以实现系统小型化和更高的效率。该产品具有250V的漏源电压、50A的连续漏极电流和小于85mΩ的导通电阻(在VGS=10V时)。它采用TO-263-3L封装,适用于多种应用场景。

SXSEMI

SX50N25T

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MOSFET

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功率开关电路 ]

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Datasheet

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TO-263-3L

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