30V N+P SX50G03GD -Channel Enhancement Mode MOSFET

2025-03-21
SX50G03GD是一款采用先进沟槽技术的MOSFET,提供优异的RDS(ON)、低栅极电荷,并可在低至4.5V的栅极电压下工作。该器件适用于电池保护或开关应用。其绝对最大额定值包括漏源电压、栅极源极电压、连续漏极电流等,适用于BLDC等应用。

SXSEMI

SX50G03GD

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Part#

MOSFET

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BLDC ]

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Datasheet

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TO-252-4L

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