SX50N02NF

2025-03-21
SX50N02NF是一款采用先进沟槽技术的20V N沟道增强型MOSFET,提供优异的RDS(ON)、低栅极电荷,RDS(ON) < 8.5mΩ @ VGS=4.5V,并可在低至2.5V的栅极电压下操作。该器件适用于电池保护或开关应用。

SXSEMI

SX50N02NF

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MOSFET

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电池保护 ]开关应用 ]3.3V MCU驱动负载开关 ]不间断电源 ]

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Datasheet

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PDFN5*6-8L

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