SX50N06DF - 60V N-Channel Enhancement Mode MOSFET

2025-03-21
SX50N06DF采用先进的沟槽技术,VDS = 60V ID = 50A,提供优异的RDS(ON)、低栅极电荷,并可在4.5V的低栅极电压下运行。该RDS(ON) < 16mΩ @ VGS=10V的器件适用于用作电池保护或在其他开关应用中。PDFN3*3-8L封装,负载开关,不间断电源。

SXSEMI

SX50N06DF

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MOSFET

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电池保护 ]开关应用 ]负载开关 ]不间断电源 ]

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Datasheet

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PDFN3*3-8L

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