HN70N03CE **30V N-Channel Enhancement Mode MOSFET

2025-03-20
HN70N03CE是一款采用先进沟槽技术的MOSFET,提供优异的RDS(ON)、低栅极电荷,并可在低至4.5V的栅极电压下运行。该器件适用于电池保护或开关应用。

华半

HN70N03CE

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Part#

MOSFET

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电池保护 ]负载开关 ]不间断电源 ]

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Technical Documentation

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Please see the document for details

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DFN3*3-8L

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Rve1.0

4.8 MB

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