HNS20N65/HNS20N65F 650V N-Channel MOSFET

PublishTime：2025-03-20

HNS20N65/HNS20N65F是一款采用Maple semi先进沟槽MOSFET技术的650V N-Channel MOSFET。该技术特别针对降低导通电阻、提供优异的开关性能和承受雪崩和换向模式下的高能量脉冲而设计。这些器件非常适合用于高效开关电源。其主要特性包括20A连续漏极电流、650V漏源电压、170mΩ的导通电阻（VGS = 10V）、低栅极电荷（典型Qg = 30.2nC）、高鲁棒性、快速开关、100%雪崩测试和改进的dv/dt能力。

Brand of Product：	华半
Part#：	HNS20N65 、 HNS20N65F More Part#
Product Category：	MOSFET More
Application：	[ 高效开关电源 ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-220, TO-220F
Language：	English Chinese Chinese and English Japanese
Date of Creation：
Version Number：
Data Encoding：
Data Size：	1.1 MB

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