HN50N20PM **200V N-Channel Enhancement Mode MOSFET

PublishTime：2025-03-20

HN50N20PM 是一款采用自对准平面技术的硅 N 沟道增强型 VDMOSFET，通过降低导通损耗、提高开关性能和增强雪崩能量，适用于各种功率开关电路，以实现系统小型化和更高的效率。其主要特性包括 VDS = 200V，ID = 50A，RDS(ON) < 60mΩ@ VGS=10V。该器件适用于功率放大器和电机驱动等应用。

Brand of Product：	华半
Part#：	HN50N20PM More Part#
Product Category：	MOSFET More
Application：	[ 功率放大器 ][ 电机驱动 ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-247-3L
Language：	English Chinese Chinese and English Japanese
Date of Creation：
Version Number：	Rev1.0
Data Encoding：
Data Size：	4.5 MB

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