HXYG75N10NF N-SGT Enhancement Mode MOSFET
■The HXYG75N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.
■This device is specially designed to get better ruggedness and suitable to use in
●General Features
■VDS = 100V ID =75A
■RDS(ON) < 9.2mΩ@ VGS=10V
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Please see the document for details |
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DFN5X6-8L |
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English Chinese Chinese and English Japanese |
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2023/8/2 |
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663 KB |
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