5N10-HXY N-Channel Enhancement Mode MOSFET
■The 5N10-HXY uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
●General Features
■VDS = 100V ID =5A
■RDS(ON) < 125mΩ @ VGS=10V
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Datasheet |
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Please see the document for details |
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SOT-23 |
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English Chinese Chinese and English Japanese |
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2023/7/27 |
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1.1 MB |
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