WSD20L75DN33 P-Channel MOSFET
■The WSD20L75DN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●Features
■High density cell design for ultra-low RDS(ON)
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high EAS
■Excellent package for good heat dissipation
|
[ Load switch ][ Battery protection ] |
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
DFN3X3-8L |
|
|
English Chinese Chinese and English Japanese |
|
|
Oct. 2023 |
|
|
Rev 3.0 |
|
|
|
|
|
1 MB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
