WSD20L75DN33 P-Channel MOSFET
■The WSD20L75DN33 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
●Features
■High density cell design for ultra-low RDS(ON)
■Fully characterized avalanche voltage and current
■Good stability and uniformity with high EAS
■Excellent package for good heat dissipation
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[ Load switch ][ Battery protection ] |
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Datasheet |
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Please see the document for details |
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DFN3X3-8L |
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English Chinese Chinese and English Japanese |
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Oct. 2023 |
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Rev 3.0 |
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1 MB |
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