WSD20L75DN P-Ch MOSFET
■General Description
●The WSD20L75DN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
■Features
●High density cell design for ultra low Rdson
●Fully characterized avalanche voltage and current
●Good stability and uniformity with high EAS
●Excellent package for good heat dissipation
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[ Load switch ][ Battery protectio ] |
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Datasheet |
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Please see the document for details |
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DFN3X3-8 |
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English Chinese Chinese and English Japanese |
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Dec.2014 |
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957 KB |
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