TP65H300G4LSG 650V SuperGaN® FET in PQFN (source tab)
●Description
■The TP65H300G4LSG 650V, 240 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
■The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
●Features
■JEDEC-qualified GaN technology
■Dynamic RDS(on) production tested
■Robust design, defined by
▲Intrinsic lifetime tests
▲Wide gate safety margin
▲Transient over-voltage capability
■Enhanced inrush current capability
■Very low QRR
■Reduced crossover loss
●Benefits
■Enables AC-DC bridgeless totem-pole PFC designs
▲Increased power density
▲Reduced system size and weight
▲Overall lower system cost
■Achieves increased efficiency in both hard- and softswitched circuits
■Easy to drive with commonly-used gate drivers
■GSD pin layout improves high speed design
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SuperGaN® FET 、 gallium nitride FET 、 GaN FET 、 normally-off device |
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[ Consumer ][ Power adapters ][ Low power SMPS ][ Lighting ] |
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Datasheet |
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Please see the document for details |
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PQFN |
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English Chinese Chinese and English Japanese |
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September 12, 2023 |
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tp65h300g4lsg.2v4 |
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1.1 MB |
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