TP65H300G4LSG 650V SuperGaN®FET in PQFN (source tab)
●The TP65H300G4LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
●The Gen IV SuperGaN®platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
■Features
●JEDEC qualified GaN technology
●Dynamic R-DS(on)eff production tested
●Robust design, defined by
▲Intrinsic lifetime tests
▲Wide gate safety margin
▲Transient over-voltage capability
●Enhanced inrush current capability
●Very low Q-RR
●Reduced crossover loss
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[ Consumer ][ Power adapters ][ Low power SMPS ][ Lighting ] |
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Datasheet |
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Please see the document for details |
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PQFN |
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English Chinese Chinese and English Japanese |
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Mar. 2, 2021 |
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Version 2.1 |
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tp65h300g4lsg.2v1 |
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1.1 MB |
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