TP65H035G4WSQA 650V SuperGaN® FET in TO-247 (source tab)
●Description
■The TP65H035G4WSQS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
■The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
●Features
■AEC-Q101 qualified GaN technology
■Dynamic RDS(on)eff production tested
■Robust design, defined by
▲Wide gate safety margin
▲Transient over-voltage capability
■Enhanced inrush current capability
■Very low QRR
■Reduced crossover loss
●Benefits
■Enables AC-DC bridgeless totem-pole PFC designs
▲Increased power density
▲Reduced system size and weight
▲Overall lower system cost
■Achieves increased efficiency in both hard- and softswitched circuits
■Easy to drive with commonly-used gate drivers
■GSD pin layout improves high speed design
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SuperGaN® FET 、 gallium nitride FET 、 GaN FET 、 normally-off device |
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[ Automotive ][ Datacom ][ Broad industrial ][ PV inverter ][ Servo motor ] |
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Datasheet |
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Please see the document for details |
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TO-247 |
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English Chinese Chinese and English Japanese |
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Oct. 29, 21 |
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Version 1.3 |
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tp65h035G4wsqa.1v3 |
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720 KB |
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