TP65H035G4WSQA 650V SuperGaN® FET in TO-247 (source tab)
● The TP65H035G4WSQS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm's Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
●The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
■Features :
●AEC-Q101 qualified GaN technology
●Dynamic R-DS(on)eff production tested
●Robust design, defined by
◆Wide gate safety margin
◆Transient over-voltage capability
●Enhanced inrush current capability
●Very low Q-RR
●Reduced crossover loss
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[ Automotive ][ Datacom ][ Broad industrial ][ PV inverter ][ Servo motor ] |
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Datasheet |
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Please see the document for details |
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TO-247 |
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English Chinese Chinese and English Japanese |
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Oct. 29, 21 |
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Version 1.3 |
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tp65h035G4wsqa.1v3 |
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720 KB |
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