TP65H035G4WS 650V SuperGaN®FET in TO-247 (source tab)
●The TP65H035G4WS 650V, 30 mΩ gallium nitride GaN FET is a normally-off device using Transphorm’s Gen V platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
●The Gen IV SuperGaN™ platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.
■Features
●JEDEC qualified GaN technology
●Dynamic R-DS(on)eff production tested
●Robust design, defined by
▲Wide gate safety margin
▲Transient over-voltage capability
●Enhanced inrush current capability
●Very low Q-RR
●Reduced crossover loss
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[ Datacom ][ Broad industrial ][ PV inverter ][ Servo motor ] |
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Datasheet |
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Please see the document for details |
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TO-247 |
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English Chinese Chinese and English Japanese |
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Apr. 22, 2021 |
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Version 3.1 |
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tp65h035G4ws.3v1 |
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1.7 MB |
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