EPC2361 – Enhancement Mode Power Transistor DATASHEET
●Description
■Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
●EPC2361
■Package size: 3 x 5 mm
●Applications
■High Power PSU AC-DC Synchronous Rectification
■High Frequency DC-DC Conversion up to 80 V input (Buck, Boost, Buck-Boost and LLC)
■24 V–60 V Motor Drives
■High Power Density DC-DC modules from 40 V– 60 V to 5 V–12 V
■Synchronous Rectification
■Solar MPPT
●Benefits
■Ultra High Efficiency
■No Reverse Recovery
■Ultra Low QG
■Small Footprint
■Excellent Thermal
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[ High Power PSU AC-DC Synchronous Rectification ][ 24 V–60 V Motor Drives ][ High Power Density DC-DC modules ][ Solar MPPT ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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March, 2024 |
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2.3 MB |
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