Passive Components for GaN Based Devices TECHNICAL PAPER

2024-01-29
■Abstract
▲The theoretical limits of Silicon-based device performance are fast approaching, and in some cases, already here. Therefore, IC (integrated circuit) design companies have turned their efforts into driving costs down while increasing the performance of wide band gap semiconductors such as GaN (Gallium Nitride).

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MIM capacitorsMetal-Insulator-Metal capacitorsTantalum polymer capacitorsLow inductance MLCCsSingle layer capacitorsSLCStacked MLCCsHigh Voltage MLCCsHigh voltage stacked capacitorsEpoxy coated space-grade high voltage horizontal stack MLCCFilm capacitorsMulti-Layer Ceramic Capacitor

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consumer ]industrial ]military ]space ]

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0805;0508

English Chinese Chinese and English Japanese

2021/8/30

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