INSULATED GATE BIPOLAR TRANSISTOR IRG4PH40KPbF
■Features
▲High short circuit rating optimized for motor control, t-sc =10ps, Vcc = 720V，Tj= 125°C, V-GE = 15V
▲Combines low conduction losses with high switching speed
▲Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
▲Lead-Free
■Benefits
▲As a Freewheeling Diode we recommend our HEXFRED™ ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT
▲Latest generation 4 IGBTs offer highest power density motor controls possible
▲This part replaces the IRGPH40K and IRGPH40M devices
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INSULATED GATE BIPOLAR TRANSISTOR 、 Short Circuit Rated UltraFast IGBT |
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Datasheet |
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Please see the document for details |
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TO-247AC |
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English Chinese Chinese and English Japanese |
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8/3/04 |
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PD-95625 |
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704 KB |
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