High frequency DC:DC power conversion: The influence of package parasitics
■Abstract
●Operating power MOSFET devices at frequencies over 1MHz will pose significant challenges to established power electronic packages such as the D2-Pak and wirebonded SO-8 devices. In this paper the high frequency parasitic impedances of a range of power electronic packages are presented. Results show that a source mounted power package technology based upon a copper clip type assembly has considerably lower parasitic impedance compared to conventional power packaging at frequencies in the range of 500KHz to over 1MHz. The resistance of conventional packages recorded over this range of frequencies increases significantly as the frequency approaches 1Mhz. This is expected to be a result of skin effect related phenomena occurring in wire bonds and package leads. Package impedance data up to frequencies of 5MHz will be presented for a range of packages along with efficiency data recorded from devices operating in multi-phase buck converter circuits.
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Datasheet |
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Please see the document for details |
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D2-Pak;SO-8;D-Pak;MLP;DirectFETTM |
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English Chinese Chinese and English Japanese |
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2018/02/13 |
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421 KB |
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